| PART |
Description |
Maker |
| RFH25P08 RFK25P08 RFK25P10 RFH25P10 |
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs 25 A, 80 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-218AC
-25A/ -100V and -80V/ 0.150 Ohm/ P-Channel Power MOSFETs
-25A -100V and -80V 0.150 Ohm P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RFP6P10 RFP6P08 |
-6A/ -80V and -100V/ 0.600 Ohm/ P-Channel Power MOSFETs
-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| RFP12N10 RFP12N08 RFM12N10 RFM12N08 |
12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs
12A 80V and 100V 0.200 Ohm N-Channel Power MOSFETs
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| RFP18N10 RFM18N08 RFM18N10 RFP18N08 |
18A/ 80V and 100V/ 0.100 Ohm/ N-Channel Power MOSFETs
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| STS3C2F80 |
N-CHANNEL 80V - 0.069 OHM - 3A SO-8 P-CHANNEL 80V - 0.20 OHM - 2.3A SO-8 STripFET™ II POWER MOSFET
|
ST Microelectronics
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| STS3C2F100 |
N-CHANNEL 100V - 0.110 OHM - 3A SO-8 P-CHANNEL 100V - 0.320 OHM - 1.5A SO-8 COMPLEMENTARY PAIR STripFET™ POWER MOSFET
|
ST Microelectronics
|
| CW1XCT52A0.015OHMJ CW1XCT52A0.024OHMJ CW1XCT52A0.0 |
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.015 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.024 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.027 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.016 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.036 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.011 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.012 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.018 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.039 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.043 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.013 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 3 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 3 W, 1 %, 50 ppm, 0.604 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
|
KOA Speer Electronics,Inc.
|
| STL22NF10 |
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLATLOW GATE CHARGE STripFETII MOSFET
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT LOW GATE CHARGE STripFET II MOSFET
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ II MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
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